SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To improve switching characteristics of a semiconductor device.SOLUTION: A semiconductor device 100 comprises: a first compound semiconductor layer 6; a second compound semiconductor layer 8 having band gap larger than that of the first compound semiconductor layer; a p-type third compound semiconductor layer 14 provided on a part of the second compound semiconductor layer 8; a p-type fourth compound semiconductor layer 16 which is provided on the third compound semiconductor layer 14 and has higher resistance than the third compound semiconductor layer 14; and a gate electrode 18 provided on the fourth compound semiconductor layer 16.