| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having a high photoelectric conversion efficiency.SOLUTION: A method of manufacturing a photoelectric conversion device 11, comprises: a step of producing on an electrode layer 2 a coating M which contains a Group-11 element, an indium element, a gallium element, and a selenium element, and in which, at a surface part at an opposite side to the electrode layer 2, an atom concentration ratio of the gallium element to a total atom concentration of the indium element and the gallium element becomes higher with approaching a principal surface at the opposite side to the electrode layer 2; and a step of heating the coating M in a first atmosphere containing a sulfur element to obtain a semiconductor layer 3 containing a Group I-III-VI compound. |
