| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of suppressing reduction in conversion efficiency caused by a leakage current of a microcrystal silicon layer.SOLUTION: There is provided a photoelectric conversion device including, on a supporting substrate, a first electrode layer, a photoelectric conversion layer, and a second electrode layer, sequentially from the light incident side. The photoelectric conversion layer comprises a p-type semiconductor layer, an i-type semiconductor layer, an interface layer, and an n-type semiconductor layer, sequentially from the first electrode layer side. All of the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are made of a microcrystal silicon-based semiconductor. The interface layer is made of an amorphous silicon-based semiconductor, and exhibits n-type conductivity. |
