| 摘要 |
<p>A light emitting device according to an embodiment comprises a first semiconductor layer doped with an n-type dopant; a second semiconductor layer doped by p-type dopant; an active layer arranged between the first semiconductor layer and the second semiconductor layer, formed in In_xAl_yGa_(1-x-y)N (0<=x<=1, 0<=y<=1, 0<=x+y<=1), and including multiple wall layers and multiple well layers located on the wall layers and having a bandgap energy lower than the multiple wall layers; a middle layer arranged between the active layer and the second semiconductor layer, formed as In_aAl_bGa_(1-a-b)N (0<=a<=1, 0<=b<=1, 0<=a+b<=1), and having bandgap energy lower than the multiple wall layer; and a light emitting device arranged between the middle layer and the second semiconductor layer, formed as In_zAl_wGa_(1-z-w)N (0<=z<=1, 0<=w<=1, 0<=z+w<=1), and having bandgap energy higher than the middle layer.</p> |
