| 摘要 |
<p>A method for driving a memory controller which manages a bad area of a nonvolatile memory device includes the steps of: erasing the nonvolatile memory device with a block unit; and searching a bad memory cell by erasing and verifying the nonvolatile memory device after an erasing operation. And, the present invention manages a word line including the bad memory cell or a block including the bad memory cell as the bad area according to the comparison result by comparing a reference voltage with a threshold voltage of the bad memory cell.</p> |
