发明名称 ON DELAY INTEGRATED CIRCUIT
摘要 FIELD: electricity.SUBSTANCE: in the known on delay integrated circuit containing input transistor of p-n-p type and output transistor of n-p-n type with load in collector circuit the input transistor base is coupled to current-setting circuit, emitter is coupled to power supply bus and collector is connected to the first output of capacitor, the second output of capacitor and emitter of the output transistor are interconnected to the first output of the capacitor, the second output of the capacitor and emitter of output transistor are coupled to the common bus, base of the output transistor is connected to the first output of the resistor, the input transistor is made as a lateral structure with auxiliary area of p-type, which is placed inside insulated n-well of the input transistor between its collector and boundary of this n-well insulating area.EFFECT: reduced area occupied by on delay integrated circuit at the crystal, reduced consumed power and expanded range of supply voltage change.2 dwg
申请公布号 RU2547616(C1) 申请公布日期 2015.04.10
申请号 RU20140115445 申请日期 2014.04.18
申请人 OTKRYTOE AKTSIONERNOE OBSHCHESTVO "NAUCHNO-PROIZVODSTVENNOE PREDPRIJATIE "PUL'SAR" 发明人 DIK PAVEL ARKAD'EVICH;DIK TAT'JANA ALEKSEEVNA;EVSTIGNEEV ALEKSEJ ANDREEVICH
分类号 H03K5/01 主分类号 H03K5/01
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