| 摘要 |
<p>The polishing pad (104) has interconnected cell units reticulated for allowing fluid flow and removal of debris, and polishing elements forming three-dimensional network of cells, with ends connected to adjacent polishing elements at respective junctions. The polishing elements include cross-sectional area that remains within 30% between the junctions. A polishing surface (110) formed from several polishing elements, includes a surface area, measured in a plane parallel to the polishing surface, which remains consistent for multiple polishing operations. An independent claim is included for polishing method of magnetic, optical and semiconductor substrate.</p> |
