发明名称 ETCHING COMPOSITION FOR COPPER AND MOLIBDENUM CONTAINING FILM
摘要 <p>The present invention relates to an etching composition to enable a stable etching process by preventing an undercut on molybdenum or a molybdenum containing film in the etching process of a copper and molybdenum containing film, thereby improving etching properties on tapering angles, CD loss, and etching linearity. The etching composition is composed of 10-30 wt% of hydrogen peroxide, 0.1-5 wt% of an etching inhibitor, 0.1-5 wt% of a chelating agent, 0.1-5 wt% of an etching additive, 0.01-2 wt% of a fluorine compound, 0.01-2 wt% of an undercut inhibitor, and remaining amount of water based on the total weight of the composition.</p>
申请公布号 KR20150039526(A) 申请公布日期 2015.04.10
申请号 KR20130118194 申请日期 2013.10.02
申请人 发明人
分类号 C09K13/00;C23F1/18 主分类号 C09K13/00
代理机构 代理人
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