| 摘要 |
<p>Disclosed are an x-ray detector and a CT system including the x-ray detector. The disclosed x-ray detector comprises an anode and a cathode formed on both sides of a semiconductor layer respectively, and a first surface of a semiconductor in which the cathode is formed is the surface having large change in surficial potential upon light radiation compared with the second surface of the semiconductor in which the anode is formed.</p> |
