| 摘要 |
The method involves forming a first layer i.e. silicon layer (6), whose portion is porous, and forming an inter-layer (16) on the first layer to ensure mechanical properties of a structure. A second layer is formed on the inter-layer, where a portion of the second layer is porous. The structure is formed in a stack of the first layer, the inter-layer and the second layer, where the first and second layers are made of porous silicon germanium and the inter-layer is made of non-porous silicon germanium. The structure is released by partial withdrawal of a sacrificial layer (4). |
