| 摘要 |
FIELD: process engineering.SUBSTANCE: invention relates to metal forming and can used for fabrication of pellets for further processing by, for example, forging or ESR process. Chips are ground, compacted and subjected to sputter-ion sintering along with compressive pressure. Note here that that pressure is varied from 0.06 to 0.15 of breaking point of initial process material while the number of pulses is varied from 2 to 8. Duration of one pulse varies from 0.5 to 2.0 s while that between two individual pulses varies from 0.2 to 1.0 s, total duration of pulses making 1-16 s. Specific power supplied at sputter-ion sintering is defined by the formula E= k · T· C, where k is factor selected to make 0.6-0.95; Tis metal fusion point, K; C is specific heat capacity, kJ/(kg·K).EFFECT: lower electric power input and higher strength.4 tbl |
