| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce warpage of a semiconductor substrate in which semiconductor devices are provided on both surfaces of the substrate.SOLUTION: A semiconductor device comprises on a surface of a semiconductor substrate 11, a compensation film 14 for generating a stress for cancelling warpage of the semiconductor substrate 11. The compensation film 14 does not cover the whole area of the semiconductor substrate 11 and has a plurality of opened window parts 15 which are arranged at a predetermined distance from each other in a linear shape or a lattice shape or arranged at a predetermined distance from each other in an island shape. The compensation film 14 is formed on a surface of the semiconductor substrate 11 or on a surface on the opposite side to the surface of the semiconductor substrate 11, or in a semiconductor device formed on the semiconductor substrate 11.</p> |
