| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve a breaking strength of a semiconductor substrate; and to prevent cracking and chipping.SOLUTION: A semiconductor device comprises a semiconductor substrate 11, and thin films 12 and 13 which are formed on an outer periphery Ao of a principal surface 1a of the semiconductor substrate 11, an outer periphery Ao of a surface 1b on the opposite side to the principal surface 1a, and one or all of side surfaces. The thin films 12 and 13 are made of a material having a linear expansion coefficient larger than that of the semiconductor substrate 11, and generate compressive stress in the semiconductor substrate 11. The material of the thin films 12 and 13 is metal oxide, metal nitride, metal oxynitride, or ceramics. The semiconductor substrate 11 includes silicon, silicon carbide, gallium nitride, or diamond.</p> |
