| 发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE THEREOF |
| 摘要 |
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming an insulating material layer over a workpiece, patterning an upper portion of the insulating material layer with a conductive line pattern, and forming a stop layer comprising a metal oxide or a metal nitride over the patterned insulating material layer. A masking material is formed over the stop layer, and the masking material is patterned with a via pattern. The via pattern of the masking material is transferred to a lower portion of the insulating material layer. |
| 申请公布号 |
US2015097293(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201314046516 |
申请日期 |
2013.10.04 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Yao Hsin-Chieh;Lee Chung-Ju;Bao Tien-I;Shue Shau-Lin |
| 分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming an insulating material layer over a workpiece; patterning an upper portion of the insulating material layer with a conductive line pattern; forming a stop layer comprising a metal oxide or a metal nitride over the patterned insulating material layer; forming a masking material over the stop layer; patterning the masking material with a via pattern; and transferring the via pattern of the masking material to a lower portion of the insulating material layer. |
| 地址 |
Hsin-Chu TW |
