INTERCONNECTS HAVING SEALING STRUCTURES TO ENABLE SELECTIVE METAL CAPPING LAYERS

摘要

Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

主权项

1. A method of fabricating an interconnect structure, comprising:
providing an interconnect including a conductive material extending into a dielectric material layer; forming capping layer proximate said interconnect; and forming a sealing structure to seal at least one gap of exposed interconnect conductive material between said capping layer and said dielectric layer.