发明名称 INDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 An inductor structure includes a substrate, a protection layer, a patterned first conductive layer, copper bumps, a passivation layer, a diffusion barrier layer, and an oxidation barrier layer. The protection layer is located on the substrate. The bond pads of the substrate are respectively exposed through protection layer openings. The first conductive layer is located on the surfaces of the bond pads and the protection layer adjacent to the protection layer openings. The copper bumps are located on the first conductive layer. The passivation layer is located on the protection layer and the copper bumps. At least one of the copper bumps is exposed through a passivation layer opening. The diffusion barrier layer is located on the copper bump that is exposed through the passivation layer opening. The oxidation barrier layer is located on the diffusion barrier layer.
申请公布号 US2015097268(A1) 申请公布日期 2015.04.09
申请号 US201414483656 申请日期 2014.09.11
申请人 XINTEC INC. 发明人 LAI Wei-Ming;HU Yu-Wen
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. An inductor structure comprising: a substrate having a plurality of bond pads; a protection layer located on the substrate and the bond pads and having a plurality of protection layer openings, wherein the bond pads are respectively exposed through the protection layer openings; a patterned first conductive layer located on surfaces of the bond pads and the protection layer adjacent to the protection layer openings; a plurality of copper bumps located on the first conductive layer; a passivation layer located on the protection layer and the copper bumps and having at least one passivation layer opening, wherein at least one of the copper bumps is exposed through the passivation layer opening; a diffusion barrier layer located on the copper bump exposed through the passivation layer opening; and an oxidation barrier layer located on the diffusion barrier layer.
地址 Zhongli City TW