发明名称 |
INDUCTOR STRUCTURE WITH MAGNETIC MATERIAL AND METHOD FOR FORMING THE SAME |
摘要 |
Embodiments of mechanisms of forming an inductor structure are provided. The inductor structure includes a substrate and a first dielectric layer formed over the substrate. The inductor structure includes a first metal layer formed in the first dielectric layer and a second dielectric layer over the first metal layer. The inductor structure further includes a magnetic layer formed over the first dielectric layer, and the magnetic layer has a top surface, a bottom surface and sidewall surfaces between the top surface and the bottom surface, and the sidewall surfaces have at least two intersection points. |
申请公布号 |
US2015097267(A1) |
申请公布日期 |
2015.04.09 |
申请号 |
US201314044979 |
申请日期 |
2013.10.03 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
TSENG Yuan-Tai;LIU Ming-Chyi;CHOU Chung-Yen;TSAI Chia-Shiung |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. An inductor structure, comprising:
a substrate; a first dielectric layer formed over the substrate; a first metal layer formed in the first dielectric layer; a second dielectric layer over the first metal layer; a magnetic layer formed over the first dielectric layer, wherein the magnetic layer has a top surface, a bottom surface and sidewall surfaces between the top surface and the bottom surface, and the sidewall surfaces have at least two intersection points, and wherein the sidewall surfaces comprise a first pair of sidewall surfaces adjoin the bottom surface and a second pair of sidewall surfaces adjoin the first pair of sidewall surfaces, wherein the first pair of sidewall surfaces are vertical to the bottom surface of the magnetic layer; and the second pair of sidewall surfaces taper gradually toward the top surface of the magnetic layer. |
地址 |
Hsin-Chu TW |