| 发明名称 |
INTEGRATED CIRCUIT AND METHOD FOR FABRICATING THE SAME HAVING A REPLACEMENT GATE STRUCTURE |
| 摘要 |
An integrated circuit includes a first FET structure and a second FET structure, both of which being formed over a silicon substrate. The first FET structure includes a high-k material layer, a layer of a first workfunction material formed over the high-k material layer, a layer of a barrier material formed over the first workfunction material layer; and a layer of a gate fill material formed over the barrier material layer. The entirety of the barrier material layer and the gate fill material layer are formed above the first workfunction material layer. The second FET structure includes a layer of the high-k material, a layer of a second workfunction material formed over the high-k material layer, a low-resistance material layer formed over the second workfunction material layer and a layer of the barrier material formed over the low-resistance material layer. |
| 申请公布号 |
US2015097246(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201414571460 |
申请日期 |
2014.12.16 |
| 申请人 |
GLOBALFOUNDRIES Inc. ;International Business Machines Corporation |
发明人 |
Xie Ruilong;Balasubramanian Pranatharthi Haran |
| 分类号 |
H01L27/092;H01L29/423;H01L29/49 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit, comprising:
a first FET structure and a second FET structure, both of which being formed over a silicon substrate, and wherein the first FET structure comprises:
a layer comprising a high-k material;a layer comprising a first workfunction material formed over the high-k material layer;a layer comprising a barrier material formed over the first workfunction material layer; anda layer comprising a gate fill material formed over the barrier material layer, wherein the entirety of the barrier material layer and the gate fill material layer are formed above the first workfunction material layer; and wherein the second FET structure comprises:
a layer comprising the high-k material;a layer comprising a second workfunction material formed over the high-k material layer;a layer comprising the barrier material formed over the second workfunction material layer; anda layer comprising the gate fill material formed over the barrier material layer, wherein a portion of the barrier material layer and the gate fill material layer are formed above the second workfunction material layer. |
| 地址 |
Grand Cayman KY |
