3-D NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A three-dimensional (3-D) nonvolatile memory device includes channel layers protruding perpendicular to a surface of a substrate, interlayer insulating layers and conductive layer patterns alternately formed to surround each of the channel layers, a slit formed between the channel layers, the slit penetrating the interlayer insulating layers and the conductive layer patterns, and an etch-stop layer formed on the surface of the substrate at the bottom of the slit.

主权项

1. A three-dimensional (3-D) nonvolatile memory device, comprising:
channel layers protruding perpendicular to a surface of a substrate; interlayer insulating layers and conductive layer patterns alternately formed to surround each of the channel layers; a slit faulted between the channel layers, the slit penetrating the interlayer insulating layers and the conductive layer patterns; and an etch-stop layer formed on the surface of the substrate at a bottom of the slit.