| 发明名称 |
BURIED TRENCH ISOLATION IN INTEGRATED CIRCUITS |
| 摘要 |
A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a trench in the substrate and a method of fabricating the same are also discussed. The trench is positioned between first and second devices and comprises a first filled portion and a second filled portion. The first filled portion of the trench comprises a dielectric material that forms a buried trench isolation for providing electrical isolation between the first and second devices. |
| 申请公布号 |
US2015097224(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201314048527 |
申请日期 |
2013.10.08 |
| 申请人 |
Spansion LLC |
发明人 |
XUE Lei;LU Ching-Huang;CHAN Simon Siu-Sing |
| 分类号 |
H01L21/762;H01L21/28;H01L27/088 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit (IC), comprising:
a substrate; a first device and a second device, the first and the second devices each comprising a gate structure; and a trench in the substrate positioned between the first and second devices, the trench comprising:
a first filled portion comprising a dielectric material is configured to form a buried trench isolation between the first and second devices; anda second filled portion comprising a conductive material. |
| 地址 |
Sunnyvale CA US |
