VERTICAL TUNNELING NEGATIVE DIFFERENTIAL RESISTANCE DEVICES

摘要

The present disclosure relates to the fabrication of microelectronic devices having at least one negative differential resistance device formed therein. In at least one embodiment, the negative differential resistance devices may be formed utilizing quantum wells. Embodiments of negative differential resistance devices of present description may achieve high peak drive current to enable high performance and a high peak-to-valley current ratio to enable low power dissipation and noise margins, which allows for their use in logic and/or memory integrated circuitry.

主权项

1. A microelectronic device, comprising:
a microelectronic substrate; a buffer layer on the microelectronic substrate a bottom barrier layer on the buffer layer; a lower quantum well on the bottom barrier layer; a barrier layer on the lower quantum well; an upper quantum well on the barrier layer; a top barrier layer on the upper quantum well; a gate on the top barrier layer comprising a gate electrode and a gate dielectric between the gate electrode and the top barrier layer; an upper quantum well contact extending through the top barrier layer and coupled to the upper quantum well; and a lower quantum well contact coupled to the lower quantum well, wherein the lower quantum well contact extends through the top barrier layer, the upper quantum well, and the barrier layer, and wherein the lower quantum well contact is electrically isolated from the top barrier layer and the upper quantum well with a dielectric material.