| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel structure.SOLUTION: A semiconductor device comprises: a first wire; a second wire; a third wire; a fourth wire; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor including a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided for a substrate including a semiconductor material, and the second transistor is formed using an oxide semiconductor layer.</p> |
