| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting diode device.SOLUTION: An n-type GaN layer is grown on the substrate surface, silicon oxide is grown on the surface of the n-type GaN layer, and the n-type GaN layer in a mesa region is exposed by lithography process. Furthermore, a light-emitting diode structure is grown by MOCVD in the mesa region for a wafer, and a structure with a pn same surface is obtained by the characteristics of a gallium nitride epitaxial layer grown in a selective region. A light-emitting diode device is obtained by making electrodes on that structure. |
