| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid for CMP which enables the achievement of a higher polishing speed and a higher selection ratio while suppressing a polishing flaw and dishing.SOLUTION: A polishing liquid for CMP according to the present invention is a polishing liquid which comprises: spherical polishing material particles; a water-insoluble compound; and water. The polishing material particles include at least Ce. The polishing material particles further include: at least one element selected from Ce, La, Pr, Nd, Sm and Eu, of which the total content is 81 mol% or more to the total amount of rare earth elements included in the polishing material particles; and at least one element selected from Y, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, of which the content is 19 mol% or less to the total amount of the rare earth elements included in the polishing material particles. The water-insoluble compound is at least one compound selected from saturated hydrocarbons having a carbon number of 5-2000. |
