发明名称 |
VERTICAL TRENCH MOSFET DEVICE IN INTEGRATED POWER TECHNOLOGIES |
摘要 |
In described examples, a semiconductor device (100) having a vertical drain extended MOS transistor (110) may be formed by forming deep trench structures (104) to define at least one vertical drift region (108) bounded on at least two opposite sides by the deep trench structures (104). The deep trench structures (104) include dielectric liners (124). The deep trench structures (104) are spaced to form RESURF regions for the drift region (108). Vertical gates (114) are formed in vertically oriented gate trenches in the dielectric liners (124) of the deep trench structures (104), abutting the vertical drift regions (108). A body implant mask for implanting dopants for the transistor body (118) is also used as an etch mask for forming the vertically oriented gate trenches in the dielectric liners (124). |
申请公布号 |
WO2015050792(A1) |
申请公布日期 |
2015.04.09 |
申请号 |
WO2014US57804 |
申请日期 |
2014.09.26 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED |
发明人 |
MATHUR, GURU;DENISON, MARIE;PENDHARKAR, SAMEER |
分类号 |
H01L27/088;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|