| 摘要 |
Disclosed are a semiconductor device and a manufacturing method thereof. The disclosed semiconductor device comprises: a source and a drain; a semiconductor element between them; and a graphene layer separated with the drain on the source and the semiconductor element. The semiconductor element can be separated with the source, and in contact with the drain. The graphene layer can have a flat structure. A gate insulation layer and a gate can be formed on the graphene layer. The semiconductor layer may be a transistor. The semiconductor device can have a barristor structure. The semiconductor device may be a planar type graphene barristor. |
