SEMICONDUCTOR DEVICE AND POWER AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of mitigating the natural polarization associated with the ordering of an emitter layer while suppressing the disordering of the emitter layer, and a power amplifier.SOLUTION: In a semiconductor device having a bipolar transistor BT, a p-type base layer 4 is formed of a p-type GaAsSb base layer 4a and a p-type GaAs base layer 4b. An n-type InGaP emitter layer 5 is formed so as to come into contact with the p-type GaAs base layer 4b. The n-type InGaP emitter layer 5 is ordered and has compression strain(0.78%).