E-FUSES CONTAINING AT LEAST ONE UNDERLYING TUNGSTEN CONTACT FOR PROGRAMMING

摘要

Semiconductor structures are provided containing an electronic fuse (E-fuse) that includes a fuse element and at least one underlying tungsten contact that is used for programming the fuse element. In some embodiments, a pair of neighboring tungsten contacts is used for programming the fuse element. In another embodiment, an overlying conductive region can be used in conjunction with one of the underlying tungsten contacts to program the fuse element. In the disclosed structures, the fuse element is in direct contact with upper surfaces of a pair of underlying tungsten contacts. In one embodiment, the semiconductor structures may include an interconnect level located atop the fuse element. The interconnect level has a plurality of conductive regions embedded therein. In other embodiments, the fuse element is located within an interconnect level that is located atop the tungsten contacts.

主权项

1. A method of forming a semiconductor structure, said method comprising:
forming a plurality of tungsten contacts within a dielectric material; forming a fuse element atop a portion of the dielectric material and spanning a pair of neighboring tungsten contacts of the plurality of tungsten contacts; forming a dielectric capping layer atop the fuse element, the dielectric material and any remaining tungsten contacts of the plurality of tungsten contacts; and forming an interconnect level atop the dielectric capping layer, said interconnect level comprising another dielectric material having at least one conductive region located therein.