SEMICONDUCTOR DEVICE

摘要

In a semiconductor device including an oxide semiconductor film, defects in the oxide semiconductor film are reduced. In addition, the electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. Furthermore, the reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer and a pair of electrodes in contact with the oxide semiconductor layer and containing copper, aluminum, gold, or silver is provided. The oxide semiconductor layer has a stacked-layer structure including a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer; the second oxide semiconductor layer includes a plurality of crystal parts having c-axis alignment; and c-axes of the plurality of crystal parts are aligned in a direction parallel to a normal vector of a top surface of the second oxide semiconductor layer.

主权项

1. A semiconductor device comprising;
an oxide semiconductor layer; and a pair of electrodes in contact with the oxide semiconductor layer, the pair of electrodes including at least one of copper, aluminum, gold, and silver, wherein the oxide semiconductor layer has a stacked-layer structure comprising:
a first oxide semiconductor layer comprising a channel;a second oxide semiconductor layer; anda third oxide semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, wherein the second oxide semiconductor layer includes a plurality of crystal parts having c-axis alignment, and wherein c-axes of the plurality of crystal parts are aligned in a direction parallel to a normal vector of a top surface of the second oxide semiconductor layer.