| 摘要 |
This method for cleaning a wafer is a method for cleaning a wafer that has a recessed and projected pattern on the surface, with the surface of a recessed portion of the recessed and projected pattern having at least one element selected from among titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium. This method for cleaning a wafer is characterized by comprising at least: a pretreatment step wherein at least the recessed portion of the recessed and projected pattern is caused to hold a cleaning liquid; a protective film formation step wherein at least the recessed portion of the recessed and projected pattern is caused to hold a chemical liquid for forming a protective film after the pretreatment step; and a drying step wherein the liquids are removed from the recessed and projected pattern by drying. This method for cleaning a wafer is also characterized in that: the chemical liquid for forming a protective film contains a water repellent protective film-forming agent for forming a water repellent protective film at least on the surface of the recessed portion; and the cleaning liquid is acidic if the chemical liquid for forming a protective film is basic, and the cleaning liquid is basic if the chemical liquid for forming a protective film is acidic. |
