发明名称 METHOD FOR MANUFACTURING PZT THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a PZT thin film by which a PZT thin film superior in surface flatness can be formed.SOLUTION: A method for manufacturing a PZT thin film according to an embodiment of the present invention comprises the step of supplying a substrate heated to 600°C or higher with a gas for film formation arranged by mixing together a lead-containing organic metal, a zirconium-containing organic metal, and a titanium-containing organic metal; when it is supposed that a temperature at which 50% reduction of the mass of each organic metal from that before measurement is observed in TG (ThermoGravimetric analysis) is T50, the difference among the organic metals in T50 is 40°C or smaller. In this way, nuclei resulting from the thermal decomposition of the organic metals are uniformly formed on the substrate, and thus a PZT thin film superior in film surface flatness can be formed.
申请公布号 JP2015065277(A) 申请公布日期 2015.04.09
申请号 JP20130198035 申请日期 2013.09.25
申请人 ULVAC JAPAN LTD 发明人 ODAJIMA NOBUHIRO;MASUDA TAKESHI;SU HIROTSUNA
分类号 H01L21/316;C23C16/40;H01L21/8246;H01L27/105 主分类号 H01L21/316
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