发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device includes a bit line; two or more word lines; and a memory cell including two or more sub memory cells that each include a transistor and a capacitor. One of a source and a drain of the transistor is connected to the bit line, the other of the source and the drain of the transistor is connected to the capacitor, a gate of the transistor is connected to one of the word lines, and each of the sub memory cells has a different capacitance of the capacitor.
申请公布号 US2015097183(A1) 申请公布日期 2015.04.09
申请号 US201414571392 申请日期 2014.12.16
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SAITO Toshihiko
分类号 H01L27/108;H01L29/786;H01L49/02;H01L27/06 主分类号 H01L27/108
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP