发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device includes a bit line; two or more word lines; and a memory cell including two or more sub memory cells that each include a transistor and a capacitor. One of a source and a drain of the transistor is connected to the bit line, the other of the source and the drain of the transistor is connected to the capacitor, a gate of the transistor is connected to one of the word lines, and each of the sub memory cells has a different capacitance of the capacitor. |
申请公布号 |
US2015097183(A1) |
申请公布日期 |
2015.04.09 |
申请号 |
US201414571392 |
申请日期 |
2014.12.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SAITO Toshihiko |
分类号 |
H01L27/108;H01L29/786;H01L49/02;H01L27/06 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |