发明名称 MULTI-DIE FINE GRAIN INTEGRATED VOLTAGE REGULATION
摘要 A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device may include a plurality of passive elements formed on a semiconductor substrate. The passive elements may be arranged in an array of structures (102) on the semiconductor substrate. The power consuming device and the passive device may be coupled using one or more terminals (110). The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.
申请公布号 WO2015020836(A3) 申请公布日期 2015.04.09
申请号 WO2014US48603 申请日期 2014.07.29
申请人 APPLE INC. 发明人 ZERBE, JARED L.;FANG, EMERSON S.;ZHAI, JUN;SEARLES, SHAWN
分类号 H01L25/16;H01G4/228;H01L23/13;H01L23/64;H01L25/065;H01L25/18 主分类号 H01L25/16
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