Method of Fabricating III-Nitride Based Semiconductor on Partial Isolated Silicon Substrate

摘要

A semiconductor is fabricated on a silicon (Si) substrate. The semiconductor is III-nitride based. The Si substrate is partially isolated. Etching is directly processed from top on a chip for solving wire-width problem. The Si substrate does not need to be made thin. The chip can be large scaled and be prevented from bowing. Thus, the present invention simplifies producing procedure and reduces production cost. Besides, for a large-scaled chip, the breakdown voltage is enhanced; and, without making the Si substrate thin, the on-state current is remained the same and the heat problem is weakened.

主权项

1. A method of fabricating a III-nitride based semiconductor on a partial isolated silicon (Si) substrate, comprising steps of:
(a) obtaining a diode device, comprising steps of:
(a1) obtaining a Si substrate; a nucleation layer on said Si substrate; a buffer layer on said nucleation layer; an active area on said buffer layer, said active area being isolated by an isolating part; and a channel layer located in said active area on said buffer layer;(a2) obtaining a barrier layer on said channel layer; and(a3) obtaining an anode and a cathode on a layer selected from a group consisting of said barrier layer and said channel layer; and obtaining a drift area in said Si substrate between said anode and said cathode; (b) defining an etching area of said diode device and directly etching said diode device from a first direction to etch out said barrier layer, said channel layer, said buffer layer, said nucleation layer and a part of said Si substrate, wherein said etching area is defined at an area selected from a group consisting of an area inside said active area and an area outside said active area; and (c) processing an isotropic/non-isotropic lateral etching to said Si substrate until said drift area of said diode device.