发明名称 |
SEMICONDUCTOR DEVICE HAVING SELECTOR AND RESISTIVE CHANGE DEVICE AND METHOD OF FORMING THE SAME |
摘要 |
At least one example embodiment discloses a semiconductor device including a first wiring on a substrate. A second wiring is on the first wiring. A first cell is between the first wiring and the second wiring. The first cell has a first selector and a first resistive change device. A third wiring is on the second wiring. A second cell is between the second wiring and the third wiring. The second cell has a second selector and a second resistive change device. The second selector has a different thickness from the first selector. |
申请公布号 |
US2015097154(A1) |
申请公布日期 |
2015.04.09 |
申请号 |
US201414322087 |
申请日期 |
2014.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM Kyung-Min;YANG Min-Kyu;KIM Gun-Hwan |
分类号 |
H01L27/24 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a first wiring on a substrate; a second wiring on the first wiring; a first cell between the first wiring and the second wiring, the first cell having a first selector and a first resistive change device; a third wiring on the second wiring; and a second cell between the second wiring and the third wiring, the second cell having a second selector and a second resistive change device, the second selector having a different thickness than the first selector. |
地址 |
Suwon-Si KR |