发明名称 SEMICONDUCTOR DEVICE HAVING SELECTOR AND RESISTIVE CHANGE DEVICE AND METHOD OF FORMING THE SAME
摘要 At least one example embodiment discloses a semiconductor device including a first wiring on a substrate. A second wiring is on the first wiring. A first cell is between the first wiring and the second wiring. The first cell has a first selector and a first resistive change device. A third wiring is on the second wiring. A second cell is between the second wiring and the third wiring. The second cell has a second selector and a second resistive change device. The second selector has a different thickness from the first selector.
申请公布号 US2015097154(A1) 申请公布日期 2015.04.09
申请号 US201414322087 申请日期 2014.07.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM Kyung-Min;YANG Min-Kyu;KIM Gun-Hwan
分类号 H01L27/24 主分类号 H01L27/24
代理机构 代理人
主权项 1. A semiconductor device, comprising: a first wiring on a substrate; a second wiring on the first wiring; a first cell between the first wiring and the second wiring, the first cell having a first selector and a first resistive change device; a third wiring on the second wiring; and a second cell between the second wiring and the third wiring, the second cell having a second selector and a second resistive change device, the second selector having a different thickness than the first selector.
地址 Suwon-Si KR