METHOD OF MATCHING TWO OR MORE PLASMA REACTORS

摘要

Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset Δα in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset Δα.

主权项

1. A method of matching two plasma reactors, comprising:
for each one of said two plasma reactors:
(a) obtaining successive process rate distributions relative to a workpiece plane at successive tilt angles between the workpiece plane and a source power applicator, and determining successive non-uniformity values of said successive process rate distributions,(b) generating a non-uniformity function from said successive non-uniformity values and from corresponding ones of said successive tilt angles; determining an offset in tilt angle between the non-uniformity functions of said two plasma reactors; and changing the tilt angle in one of said two plasma reactors by an amount corresponding to said offset in tilt angle.