| 发明名称 |
METHOD OF MAKING PHOTOVOLTAIC DEVICE HAVING HIGH QUANTUM EFFICIENCY |
| 摘要 |
A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer. |
| 申请公布号 |
US2015096609(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201314048086 |
申请日期 |
2013.10.08 |
| 申请人 |
TSMC Solar Ltd. |
发明人 |
CHENG Tzu-Huan |
| 分类号 |
H01L31/032;H01L31/18 |
主分类号 |
H01L31/032 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a photovoltaic device, comprising
forming an absorber layer comprising an absorber material above a substrate; forming a buffer layer over the absorber layer; forming a front transparent layer over the buffer layer; and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer. |
| 地址 |
Taichung City TW |
