| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device manufacturing method which inhibits decrease in manufacturing efficiency and which can perform activation annealing in a state where a surface of a silicon carbide layer is more successfully protected.SOLUTION: An SiC semiconductor device manufacturing method comprises: a process of forming impurity regions (body region 13, source region 14, contact region 15) in an SiC layer 10; a process of selectively removing silicon from surfaces (principal surface 10A, sidewall surface SW, bottom surface BW) of the SiC layer 10 in which the impurity regions are formed, to form a first carbon layer 20 on the surfaces; a process of forming a second carbon layer 21 on the first carbon layer 20; and a process of heating the SiC layer 10 on which the first carbon layer 20 and the second carbon layer 21. |
