MEMORY CIRCUIT AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce the power consumption of a memory circuit operable as a flip-flop circuit (FF).SOLUTION: A memory circuit has first and second logic circuits, first and second transistors in which a channel formation region is composed of an oxide semiconductor, and a capacitor. The first and second transistors are connected in series to each other, and the capacitor is connected to a connection node of the first and second transistors. The first transistor functions as a switch connecting between an output terminal of the first logic circuit and the capacitor, and the second transistor functions as a switch connecting between the capacitor and an input terminal of the second logic circuit. Gates of the first and second transistors receive clock signals having reverse phases to each other. The memory circuit has less transistors and has less transistors controlled by clock signals, resulting in a circuit with low power consumption.