发明名称 |
High Density Dielectric Etch Stop Layer |
摘要 |
A method of manufacturing an integrated circuit device includes forming an inter-level dielectric layer over a semiconductor substrate, forming a transformative layer over the inter-level dielectric layer, forming a protective layer over the transformative layer without allowing the transformative layer to undergo a substantive transformation, and after forming the protective layer, causing the transformative layer to undergo a volume-increasing transformation. The volume-increasing transformation produces a high density material that provides an effective etch stop. |
申请公布号 |
US2015097288(A1) |
申请公布日期 |
2015.04.09 |
申请号 |
US201314045054 |
申请日期 |
2013.10.03 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Liou Joung-Wei;Hsiaw Han-Ti;Lin Keng-Chu |
分类号 |
H01L21/768;H01L21/48;H01L23/538 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsin-Chu TW |