METHOD AND APPARATUS FOR HIGH YIELD CONTACT INTEGRATION SCHEME

摘要

A methodology for forming contact areas by a multiple patterning process that provides increased yield and lower risk of contact-to-contact short at points of tight tip-to-tip spacing and the resulting device are disclosed. Embodiments include forming one or more trench patterning layers on a planarized surface of a wafer, forming one or more trenches in the one or more trench patterning layers, forming a block mask at one or more points along the one or more trenches, extending the one or more trenches down to a substrate level of the wafer, and removing the block mask from the one or more points.

主权项

1. A method comprising:
forming one or more trench patterning layers on a planarized surface of a wafer; forming one or more trenches in the one or more trench patterning layers; forming a block mask at one or more points along the one or more trenches; extending the one or more trenches down to a substrate level of the wafer; and removing the block mask from the one or more points, wherein a critical dimension of the block mask is 10 nanometers (nm) to 150 nm.