发明名称 Semiconductor device and method of fabricating the same
摘要 <p>Provided are a semiconductor device and a method of fabricating the same. The semiconductor device comprises a substrate; a lower electrode formed on the substrate; a dielectric film formed on the lower electrode; an adhesive film formed on the dielectric film; and an upper electrode formed on the adhesive film, wherein the adhesive film is attached to the dielectric film and the upper electrode, and contains a conductive material.</p>
申请公布号 KR20150038808(A) 申请公布日期 2015.04.09
申请号 KR20130116462 申请日期 2013.09.30
申请人 发明人
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
代理机构 代理人
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