| 摘要 |
PROBLEM TO BE SOLVED: To provide methods for determining recombination characteristics at metallized semiconductor surfaces and metallized semiconductor junctions on the basis of photo-conductance decay measurement.SOLUTION: Dedicated test structures 10 comprise a plurality of metal features 16 in contact with a semiconductor surface at predetermined locations. The metal features 16 are provided in a plurality of zones, each of the plurality of zones having a different metal coverage. A method comprises performing photo-conductance decay measurement in each of the plurality of zones thereby determining effective lifetimes for different injection levels as a function of the metal coverage; and extracting the recombination characteristics from the determined effective lifetimes. |
