发明名称 Procédé pour réduire la tendance à la cassure d'une pièce en nitrure de silicium
摘要 <p>Silicon nitride bodies are subjected to Li2O vapour, e.g for 3 to 200 hours at 500-1500 DEG C., to improve their resistance to thermal shocks. The Li2O may be obtained by heating LiOH, a 2% solution of which may be absorbed in a porous alumina brick located close to the silicon nitride body to be treated. The surface of the treated body can be etched away with HF.</p>
申请公布号 FR1454908(A) 申请公布日期 1966.10.07
申请号 FR19650039890 申请日期 1965.11.26
申请人 THE PLESSEY COMPANY LIMITED 发明人
分类号 C04B35/584;C04B41/50;C04B41/85 主分类号 C04B35/584
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