| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which saves data by using a transistor which causes less leakage current between a source and a drain which are in an off state as a write transistor.SOLUTION: In a matrix formed by using a plurality of storage cells in each of which a drain of a write transistor 114 is connected to a gate 104 of a read transistor 116 and the drain is connected with one of electrodes of a capacitor 115, a gate of the write transistor is connected to a write word line 112a, a source of the write transistor is connected to a write bit line 109a, and a source and a drain of the read transistor are respectively connected to a read bit line and a bias line. In addition, the other electrode of the capacitor is connected to a read word line 112b. In order to decrease the number of interconnections, the write bit line is used as a substitute for the read bit line. The read bit line is then formed so as to be buried in a groove-shaped opening formed on a substrate.</p> |
