OXIDE FILM FORMATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a formation method of a single crystal oxide film, which achieves high productivity; or provide a formation method of a single crystal oxide film at lower temperature; or provide a formation method of a single crystal oxide film by a simpler method.SOLUTION: A formation method of an oxide film comprises the steps of: forming on a formed surface, the oxide film having crystal parts; and performing a heat treatment on the oxide film to change crystallinity of the oxide film to a single crystal. In addition, as the oxide film formed on the formed surface, an oxide film in which c-axes in the crystal parts are aligned to a direction parallel with a normal direction of the formed surface or a normal direction of a surface of the oxide film, and which has no crystal grain boundary between the crystal parts in the oxide film is used.