SEMICONDUCTOR DEVICE BURN-IN STRESS METHOD AND SYSTEM

摘要

Burn-in (BI) stress using stress patterns with pin-specific power characteristics. A control device for each conductive pathway from BI board (BIB) contacts to device under test (DUT) connectors/contacts can adjust power delivered to a respective connector/contact responsive to a controller. The control devices can be included in the BIB or an interposer (IP) can be used with existing equipment. Each control device can include a regulator, such as a latchable array of field effect transistors that can regulate power delivered to a respective package connector.

主权项

1. A semiconductor device burn-in (BI) stress computer program product stored on a non-transitory computer readable storage medium including instructions in the form of executable computer code that when executed by a computing device configure the computing device to perform a method comprising:
virtually dividing a device under test (DUT) into a plurality of tiles; providing a BI board (BIB) including a plurality of BIB contacts each configured to deliver power to a respective tile; providing a control structure including a plurality of control devices each configured to alter power delivered to a respective tile; delivering power to the BIB contacts according to a BI pattern, each BIB contact being in electrical communication with a respective tile via a respective control device; determining a BI stress parameter value and a maximum allowable value thereof for each tile; comparing the respective BI stress parameter value and maximum allowable value of each tile; and responsive to a BI stress parameter value exceeding the respective maximum allowable value, adjusting the control structure to reduce the BI stress parameter value and repeating the determining and the comparing of the BI stress parameter values.