METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, SUBSTRATE PROCESSING DEVICE AND RECORDING MEDIUM

摘要

In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process for carrying a substrate into a processing chamber; a film forming process for laminating at least two types of films on the substrate in the processing chamber; a substrate carry-out process for carrying the film laminated substrate out from the processing chamber; an etching process for supplying an etching gas into the processing chamber while the substrate is not in the processing chamber after the substrate carry-out process. The etching process includes a first cleaning process for supplying a fluorine-containing gas activated by plasma excitation into the processing chamber as an etching gas; and a second cleaning process for supplying a fluorine-containing gas activated by heat into the processing chamber as an etching gas.

主权项

1. A method of manufacturing a semiconductor device, comprising:
loading a substrate into a processing chamber; forming at least two kinds of films on the substrate within the processing chamber; unloading the substrate having the films formed thereon from the processing chamber; and after unloading the substrate, etching by supplying an etching gas into the processing chamber without any substrate within the processing chamber, the act of etching including a first cleaning of supplying a fluorine-containing gas activated by plasma excitation as the etching gas into the processing chamber, and a second cleaning of supplying a fluorine-containing gas activated by heat as the etching gas into the processing chamber.