SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a substrate, a substrate-side electrode layer, an intermediate electrode layer, and a front-side electrode layer. The substrate includes a semiconductor layer and a projection portion, the projection portion being formed on a surface of the semiconductor layer. The substrate-side electrode layer is provided on the projection portion. The intermediate electrode layer extends from on a part of the substrate-side electrode layer, which part of the substrate-side electrode layer is located on the projection portion, to just above a region of the substrate in which region the projection portion is not provided. The front-side electrode layer is provided on a surface of the intermediate electrode layer. A Young's modulus E1 of the substrate-side electrode layer, a Young's modulus E2 of the intermediate electrode layer, and a Young's modulus E3 of the front-side electrode layer satisfy a relationship of E3>E1>E2.

主权项

1. A semiconductor device comprising:
a substrate including a semiconductor layer and a projection portion, the projection portion being formed on a surface of the semiconductor layer; a substrate-side electrode layer provided on the projection portion; an intermediate electrode layer extending from on a part of the substrate-side electrode layer, which part of the substrate-side electrode layer is located on the projection portion, to just above a region of the substrate in which region the projection portion is not provided; and a front-side electrode layer provided on a surface of the intermediate electrode layer, wherein a Young's modulus E1 of the substrate-side electrode layer, a Young's modulus E2 of the intermediate electrode layer, and a Young's modulus E3 of the front-side electrode layer satisfy a relationship of E3>E1>E2.