QUANTUM COMPUTING DEVICE SPIN TRANSFER TORQUE MAGNETIC MEMORY

摘要

A quantum computing device magnetic memory is described. The quantum computing device magnetic memory is coupled with a quantum processor including at least one quantum device corresponding to at least one qubit. The quantum computing device magnetic memory includes magnetic storage cells coupled with the quantum device(s) and bit lines coupled to the magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic junction. The magnetic junction(s) include a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction(s) are configured to allow the free layer to be switched between stable magnetic states. The magnetic junction(s) are configured such that the free layer has a nonzero initial writing spin transfer torque in an absence of thermal fluctuations.

主权项

1. A quantum computing device magnetic memory coupled with a quantum processor including at least one quantum device corresponding to at least one qubit, the quantum computing device magnetic memory comprising:
a plurality of magnetic storage cells coupled with the at least one quantum device, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a reference layer, a nonmagnetic spacer layer, and a free layer, the nonmagnetic spacer layer residing between the reference layer and the free layer, the at least one magnetic junction being configured to allow the free layer to be switched between a plurality of stable magnetic states and wherein the at least one magnetic junction is configured such that the free layer has a nonzero initial writing spin transfer torque in an absence of thermal fluctuations; and a plurality of bit lines coupled to the plurality of magnetic storage cells.